ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,684, issued on June 23, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).
"Semiconductor device and method of fabricating the same" was invented by Chi-Ren Luo (Quanzhou City, China) and Yifei Yan (Quanzhou City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device and a fabricating method thereof, includes a substrate, a gate structure, a plug hole, a plug spacer, a metal silicide layer, and a plug. The gate structure is disposed on the substrate. The plug hole is disposed within a dielectric layer to partially extended into the substrate. The plug spacer is di...