US Patent Issued to Fujian Jinhua Integrated Circuit on June 2 for "Method of forming semiconductor structure having electrically conductive structure" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,189, issued on June 2, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Method of forming semiconductor structure having electrically conductive structure" was invented by Yu-Cheng Tung (Quanzhou City, China), Yun-Fan Chou (Quanzhou City, China), Te-Hao Huang (Quanzhou City, China), Hsien-Shih Chu (Quanzhou City, China) and Feng-Ming Huang (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of forming the semiconductor structure are disclosed. Through forming an electrically conductive structure on a trench isolation structure, utilization of a space above the t...