US Patent Issued to Fujian Jinhua Integrated Circuit on July 7 for "Three-dimensional memory device with improved signal interference" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,418, issued on July 7, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Three-dimensional memory device with improved signal interference" was invented by Shiwei He (Quanzhou City, China), Canfa Dai (Quanzhou City, China), Detianyu Diao (Quanzhou City, China), Guoguo Kong (Quanzhou City, China), Hsien-Shih Chu (Quanzhou City, China) and Yongjian Yu (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes a substrate and a stack structure including alternating conductive layers and dielectric layers disposed on the substrate, and a memory string structure extendin...