US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Semiconductor device with an electrically conductive structure having a capping layer sidewall directly contacting a contact structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,761, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor device with an electrically conductive structure having a capping layer sidewall directly contacting a contact structure and manufacturing method thereof" was invented by Huixian Lai (Quanzhou City, China) and Li-Wei Feng (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a cell region and a peripheral region, a first stacked structure disposed in the semiconductor substrate, ...