US Patent Issued to Fujian Jinhua Integrated Circuit on Aug. 25 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,724, issued on Aug. 25, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor device and fabricating method thereof" was invented by Yu-Cheng Tung (Quanzhou City, China) and Janbo Zhang (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabricating method thereof, and the semiconductor device includes a substrate, a capacitor structure, a supporting structure and a supplementary layer. The capacitor structure is disposed on the substrate, and includes a plurality of columnar bottom electrodes, a capacitor dielectric layer, and a ...