ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,460, issued on April 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).
"Semiconductor memory device" was invented by Yincong Hong (Quanzhou City, China), Chia-Hung Wang (Quanzhou City, China), Yue Liu (Quanzhou City, China) and Chung-Ping Hsia (Quanzhou City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, and a plurality of contact pads and a capacitor array structure disposed on an array region of the substrate. The capacitor array structure includes a plurality of capacitors respectively disposed on the contact pads and a middle supporting layer extendin...