US Patent Issued to FUJI ELECTRIC on Sept. 22 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,418, issued on Sept. 22, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Yasushi Niimura (Matsumoto-city, Japan) and Kazuya Yamaguchi (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type; a base layer of a second conductivity type; an active region through which a main current flows and having source regions of the first conductivity type, trenches, gate insulating films, and gate electrodes; and a termination...