ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,390, issued on Sept. 2, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Yasuyuki Hoshi (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "P-type low-concentration regions face bottoms of trenches and extend in a longitudinal direction (first direction) of the trenches. The p-type low-concentration regions are adjacent to one another in a latitudinal direction (second direction) of the trenches and connected at predetermined locations by p-type low-concentration connecting portions that are scattered along the first direction and separated from one another by an interval of at least 3 mic...