US Patent Issued to FUJI ELECTRIC on Nov. 3 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,353, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device" was invented by Yasuyuki Hoshi (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having, in an outer peripheral portion of an active region, and in a depth direction from a front surface of a semiconductor substrate, first to fourth outer peripheral regions, to thereby form steps that are recessed stepwise toward the center of the semiconductor device by a same width, and are arranged in an ascending order of the proximity to the center in the depth direction. The first, second, and fourth ...