US Patent Issued to FUJI ELECTRIC on Nov. 3 for "Method of manufacturing semiconductor device by forming aluminum alloy film and removing possible defects in semiconductor chips" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,716, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Method of manufacturing semiconductor device by forming aluminum alloy film and removing possible defects in semiconductor chips" was invented by Tatsuya Hashimoto (Azumino-city, Japan), Kazuhiro Kitahara (Matsumoto-city, Japan), Noriaki Noji (Nagano-city, Japan), Ryota Kataoka (Matsumoto-city, Japan), Naoko Kodama (Matsumoto-city, Japan) and Shunya Hayashida (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device, including: forming a surface structure including a metal oxide semiconductor structure in a se...