ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,846, issued on May 26, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Silicon carbide semiconductor device" was invented by Takashi Tsuji (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A p++-type outer peripheral contact region is provided in an edge termination region and surrounds a periphery of an active region in a rectangular shape having rounded corners, in a plan view. The p++-type outer peripheral contact region faces a gate runner on a front surface of a semiconductor substrate via an insulating layer. In the active region, a p++-type region is provided facing a gate pad on the front surface of the semicond...