US Patent Issued to FUJI ELECTRIC on May 19 for "Semiconductor device and its manufacturing method" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,253, issued on May 19, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and its manufacturing method" was invented by Yoshiaki Toyoda (Nagano, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate of a first conductivity type; a first diffusion layer of a second conductivity type provided in an upper part of the substrate; a conductive layer embedded in a trench provided in an upper part of the first diffusion layer via an insulating film, the conductive layer forming a capacitive element together with the first diffusion layer and the insulating film; and a second diffusion l...