US Patent Issued to FUJI ELECTRIC on May 13 for "Semiconductor device and semiconductor device manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,726, issued on May 13, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and semiconductor device manufacturing method" was invented by Takashi Yoshimura (Matsumoto, Japan), Yuichi Onozawa (Matsumoto, Japan), Hiroshi Takishita (Matsumoto, Japan), Misaki Meguro (Matsumoto, Japan), Motoyoshi Kubouchi (Matsumoto, Japan) and Naoko Kodama (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on on...