ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,478, issued on March 31, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Motoyoshi Kubouchi (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate having bulk donors distributed throughout the semiconductor substrate; a high-concentration hydrogen peak provided on the semiconductor substrate and having a hydrogen dose amount of 3x1015/cm2 or more; a high-concentration region including a position overlapping with the high-concentration hydrogen peak in a depth direction of the semiconductor substrate and having a do...