US Patent Issued to FUJI ELECTRIC on July 7 for "Method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,619, issued on July 7, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Method of manufacturing silicon carbide semiconductor device" was invented by Hidetatsu Nakamura (Matsumoto-city, Japan), Keiji Okumura (Matsumoto-city, Japan) and Yoshikuni Fujimoto (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor device. The method includes epitaxially growing an epitaxial layer on a starting substrate to form a semiconductor wafer, forming a plurality of scribe lines, including a first scribe line, in the epitaxial layer, forming a mark in the first scribe line, inspecting...