ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,572, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Test method" was invented by Kenichi Ishii (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A test method of testing a test target transistor device is provided, the test method including: arranging the test target transistor device and a test transistor device in series between a high voltage side wire and a low voltage side wire; and causing a gate voltage applied to the test transistor device to be higher than a gate voltage applied to the test target transistor device. A difference between the gate voltage applied to the test transistor device...