US Patent Issued to FUJI ELECTRIC on Feb. 24 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,820, issued on Feb. 24, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Manabu Takei (Shiojiri, Japan), Masakazu Baba (Tsukuba, Japan) and Shinsuke Harada (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a plurality of trenches, a plurality of gate electrodes respectively provided in the trenches, a first conductive...