US Patent Issued to FUJI ELECTRIC on Feb. 24 for "Semiconductor device manufacturing method with slip suppressing impurity region" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,985, issued on Feb. 24, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device manufacturing method with slip suppressing impurity region" was invented by Takane Yamada (Matsumoto, Japan), Masayuki Momose (Matsumoto, Japan) and Naoki Kuneshita (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device manufacturing method including a process of annealing a semiconductor wafer in a state in which a supported portion on a lower surface of the semiconductor wafer is supported by using a supporting portion, wherein the supported portion includes one or a plurality of supporting portions a...