ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,792, issued on Feb. 24, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Insulated gate semiconductor device" was invented by Syunki Narita (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate semiconductor device includes: a carrier transport layer of a first conductivity-type; an injection control region of a second conductivity-type; a carrier supply region of the first conductivity-type; a base contact region of the second conductivity-type; trenches penetrating the injection control region to reach the carrier transport layer; an insulated gate structure provided inside the respective trenches; an upper b...