ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,573, issued on Feb. 17, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device provided with at least IGBT" was invented by Yosuke Sakurai (Azumino, Japan), Seiji Noguchi (Matsumoto, Japan), Takashi Yoshimura (Matsumoto, Japan), Hiroshi Takishita (Matsumoto, Japan) and Misaki Uchida (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device provided with an IGBT, comprising: a semiconductor substrate having upper and lower surfaces, throughout which bulk donors are distributed; a hydrogen peak including a local maximum arranged 25 micro metre or more away from the lower surface of the...