ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,564, issued on Dec. 9, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Yoshihiro Ikura (Matsumoto, Japan), Seiji Noguchi (Matsumoto, Japan), Yosuke Sakurai (Azumino, Japan) and Ryutaro Hamasaki (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device provided with a transistor section, the semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a plurality of trench portions extending from a front surface of the semiconductor substrate to the drift region, an emitter region of the first conduct...