US Patent Issued to FUJI ELECTRIC on Aug. 4 for "Method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,733, issued on Aug. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Method of manufacturing silicon carbide semiconductor device" was invented by Atsushi Yoshimoto (Matsumoto City, Japan), Hidenori Satou (Matsumoto City, Japan) and Takahito Kojima (Matsumoto City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor device, includes preparing a silicon carbide semiconductor substrate in which a first semiconductor layer of a first conductivity type is provided on a starting substrate of the first conductivity type; ion-implanting first semiconductor regions of a second conductivi...