US Patent Issued to FUJI ELECTRIC on Aug. 25 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,832, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device" was invented by Shinichiro Matsunaga (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes first and second JFET regions between adjacent first and second p+-type regions that are for mitigating electric field. The first p+-type region directly beneath a trench extends closer to the second p+-type region than is a sidewall of the trench by an overhang length. The second JFET region, provided between a p-type base region and the first JFET region, extends between the b...