ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,753, issued on Oct. 20, was assigned to Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V. (Munich).
"Method for preparing a germanium substrate and germanium substrate structure for epitaxial growth of a germanium layer" was invented by Stefan Janz (Freiburg, Germany) and Waldemar Schreiber (Freiburg, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a germanium substrate for epitaxial growth of a germanium layer, having the steps of: A.) providing a germanium substrate having a processing side and a rear side opposite the processing side and electrochemical etching at least the processing side with at ...