US Patent Issued to FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG on Feb. 24 for "Method for generating vertical channel structures in three-dimensionally integrated semiconductor memories" (German Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,729, issued on Feb. 24, was assigned to FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Munich).

"Method for generating vertical channel structures in three-dimensionally integrated semiconductor memories" was invented by Christoph Kutter (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a specific method step (channel hole etching) in the production of a three-dimensionally integrated semiconductor memory. According to the invention, this method step is characterized in that the vertical channel structure to be generated thereby, the so-called channel hole, is generated by applying an anod...