ALEXANDRIA, Va., March 24 -- United States Patent no. 12,583,752, issued on March 24, was assigned to FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Munich) and ESK-SIC GmbH (Frechen, Germany).

"Method for separating impurities from silicon carbide, and temperature-treated and purified silicon carbide powder" was invented by Jorg Adler (MeiBen, Germany), Heike Heymer (Dresden, Germany), Matthias Hausmann (Frechen, Germany), Wenzel Klietz (Frechen, Germany), Jan Rathel (Dresden, Germany) and Josef Garbes (Frechen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for separating impurities from silicon carbide, applicable to SiC powders from grinding sludges and to temperat...