US Patent Issued to FOCUS LIGHTINGS TECH on Oct. 27 for "LED epitaxial wafer and fabrication process thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,748, issued on Oct. 27, was assigned to FOCUS LIGHTINGS TECH Co. LTD. (Suzhou, China).

"LED epitaxial wafer and fabrication process thereof" was invented by Wenjun Wang (Suzhou, China), Han Jiang (Suzhou, China), Guochang Li (Suzhou, China), Yangyang Xu (Suzhou, China), Hu Cheng (Suzhou, China) and Shuwei Yuan (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides an LED epitaxial wafer and a fabrication process thereof, wherein an N-type GaN layer of the LED epitaxial wafer comprises an N_SL layer and an N_Bulk layer. N_SL layer and N_Bulk layer equivalently form multiple capacitive structures, and different ...