US Patent Issued to FLASHSILICON INCORPORATION on Aug. 25 for "Neuron metal oxide semiconductor devices and circuits fabricated with CMOS logic process technology" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,081, issued on Aug. 25, was assigned to FLASHSILICON INCORPORATION (Diamond Bar, Calif.).

"Neuron metal oxide semiconductor devices and circuits fabricated with CMOS logic process technology" was invented by Lee Wang (Diamond Bar, Calif.) and Jeffrey Wang (Diamond Bar, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The neuron Logic Gate Metal-Oxide-Semiconductor (NuLGMOS) circuits to mimic neurons' "integrate-and-fire" behaviors in biological neural network system can be fabricated with industry Complementary Metal-Oxide Semiconductor (CMOS) logic process technology, with which digital computational circuits are fabricated. A processing syste...