US Patent Issued to First Solar on Feb. 24 for "Photovoltaic device including a p-n junction and method of manufacturing" (Michigan, California, Idaho, Ohio Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,857, issued on Feb. 24, was assigned to First Solar Inc. (Phoenix).

"Photovoltaic device including a p-n junction and method of manufacturing" was invented by Dan Damjanovic (Boise, Idaho), Feng Liao (Perrysburg, Ohio), Rick Powell (Ann Arbor, Mich.), Rui Shao (Sylvania, Ohio), Jigish Trivedi (Pleasanton, Calif.) and Zhibo Zhao (Novi, Mich.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes ...