US Patent Issued to Ferroelectric Memory on Oct. 20 for "Cell operation circuit and memory device" (Italian Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,668, issued on Oct. 20, was assigned to Ferroelectric Memory GmbH (Dresden, Germany).

"Cell operation circuit and memory device" was invented by Corrado Villa (Sovico, Italy), Alessandro Palludo (Milan) and Luigi Paone (Pioltello, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a cell operation circuit for sensing a programmed state of a memory element comprising: a sensing circuitry comprising a sensing node, a first input terminal to receive a first operation voltage and a second input terminal to receive a second operation voltage less than the first operation voltage; a first switch configured to apply a pre-charge volta...