US Patent Issued to Ferroelectric Memory on Aug. 25 for "Memory cell arrangement and method of reading a capacitive memory cell" (Italian Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,861, issued on Aug. 25, was assigned to Ferroelectric Memory GmbH (Dresden, Germany).

"Memory cell arrangement and method of reading a capacitive memory cell" was invented by Corrado Villa (Sovico, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various aspects relate to a memory cell arrangement including: bitlines; wordlines; platelines; capacitive memory cells, wherein each of the capacitive memory cells is connected to and selectively addressable by a corresponding bitline, a corresponding wordline, and a corresponding plateline; a control circuit configured to carry out a read-out operation to read a memory state of a capacitive memory cel...