ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,089, issued on Sept. 16, was assigned to FAST SIC SEMICONDUCTOR Inc. (Hsinchu, Taiwan).
"Silicon carbide semiconductor device" was invented by Cheng-Tyng Yen (Hsinchu, Taiwan), Hsiang-Ting Hung (Hsinchu, Taiwan) and Fu-Jen Hsu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a drift layer, a first doped region, a second doped region, a gate trench, a third doped region and a gate electrode. The drift layer is disposed on a SiC substrate. The first doped region is disposed on the drift layer. The second doped region is disposed on the first doped region. The gate trench is extended from ...