US Patent Issued to Faraday Technology on Oct. 14 for "Memory physical layer interface, memory apparatus and method thereof" (Indian Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,452, issued on Oct. 14, was assigned to Faraday Technology Corp. (Hsinchu, Taiwan).

"Memory physical layer interface, memory apparatus and method thereof" was invented by Sivaramakrishnan Subramanian (Bengaluru, India), Hussainvali Shaik (Bangalore, India) and Eswar Reddi (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus includes a DFE receiver and a DFE reset circuit. The DFE receiver is configured to receive a data signal and a data strobe signal from a memory device. The DFE receiver includes a DFE tap that is determined according to a previous data signal, and the DFE receiver adjusts the data signal according t...