US Patent Issued to Faraday Technology on March 24 for "Output buffer that can prevent drain-source voltage of transistor from briefly exceeding nominal voltage" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,587,184, issued on March 24, was assigned to Faraday Technology Corp. (Hsin-Chu City, Taiwan).

"Output buffer that can prevent drain-source voltage of transistor from briefly exceeding nominal voltage" was invented by Zhou-Lun Liu (Hsin-Chu City, Taiwan), Jeng-Huang Wu (Hsin-Chu City, Taiwan), Chih-Hung Wu (Hsin-Chu City, Taiwan) and Meng-Yuan Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An output buffer includes a first P-type transistor, a second P-type transistor, a first N-type transistor, a second N-type transistor, a control circuit, and a tracking circuit. The second P-type transistor and the first P-type transistor ...