US Patent Issued to Faraday Technology, Faraday Technology on Sept. 15 for "Bandgap device and start-up circuit thereof" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,736,994, issued on Sept. 15, was assigned to Faraday Technology Corp. (Suzhou, China) and Faraday Technology Corp. (Hsinchu, Taiwan).

"Bandgap device and start-up circuit thereof" was invented by Xiao-Dong Fei (Suzhou, China), Huiwen Hu (Suzhou, China) and San-Yueh Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bandgap device and a start-up circuit thereof are disclosed. The start-up circuit includes a first transistor, delay circuit, second transistor, switch circuit, and startup switch. Control terminals of first transistor and second transistor are controlled by an internal bias voltage of the bandgap circuit. The delay circ...