US Patent Issued to Everspin Technologies on Feb. 24 for "Magnetoresistive devices and methods therefor" (Arizona Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,974, issued on Feb. 24, was assigned to Everspin Technologies Inc. (Chandler, Ariz.).

"Magnetoresistive devices and methods therefor" was invented by Jijun Sun (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks (for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device) of the present disclosure include one or more multilayer synthetic antiferromagnetic structures (SAFs) or synthetic ferromagnetic structures (SyFs) in order to promote stability of th...