US Patent Issued to Eun Park, UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION on March 17 for "Molecular beam epitaxy thin film growth apparatus" (South Korean Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,577,654, issued on March 17, was assigned to Eun Park (Busan, South Korea) and UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION (Ulsan, South Korea).

"Molecular beam epitaxy thin film growth apparatus" was invented by Eun Jung Park (Busan, South Korea), Sun Lae Cho (Busan, South Korea) and Eun Ji Park (Gyeongsangnam-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a molecular beam epitaxy (MBE) thin film growth apparatus. The MBE thin film growth apparatus includes a growth chamber which is connected to a vacuum pump and of which an inside is maintained in an ultra-high vacuum state, a substrate manipulator which is pr...