US Patent Issued to ETRON TECHNOLOGY on Oct. 27 for "3D IC structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,959, issued on Oct. 27, was assigned to ETRON TECHNOLOGY INC. (Hsinchu, Taiwan).

"3D IC structure" was invented by Chao-Chun Lu (Hsinchu, Taiwan) and Ming-Hong Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC structure includes a memory stack including a plurality of semiconductor die. The semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface, four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions...