US Patent Issued to Etron Technology on April 7 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,465, issued on April 7, was assigned to Etron Technology Inc. (Hsinchu, Taiwan).

"Memory device" was invented by Chun Shiah (Hsinchu, Taiwan) and Tzung-Shen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes: a latch circuit, having a first inverter and a second inverter cross-coupled with each other, wherein a first pull up transistor and a first pull down transistor of the first inverter are coupled through a first selection transistor, and a second pull up transistor and a second pull down transistor of the second inverter are coupled through a second selection transistor; ...