US Patent Issued to Etron Technology, Invention And Collaboration Laboratory on Dec. 23 for "Transistor structure with reduced leakage current and adjustable on/off current" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,432, issued on Dec. 23, was assigned to Etron Technology Inc. (Hsinchu, Taiwan) and Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Transistor structure with reduced leakage current and adjustable on/off current" was invented by Chao-Chun Lu (Taipei, Taiwan) and Li-Ping Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a gate, a spacer, a channel region, a first concave, and a first conductive region. The gate is above a silicon surface. The spacer is above the silicon surface and at least covers a sidewall of the gate. The channel region is under the silicon surface. The first conduc...