US Patent Issued to Epinovatech on Feb. 17 for "Vertical HEMT and a method to produce a vertical HEMT" (Swedish Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,325, issued on Feb. 17, was assigned to Epinovatech AB (Lund, Sweden).

"Vertical HEMT and a method to produce a vertical HEMT" was invented by Martin Andreas Olsson (Lund, Sweden).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a vertical high-electron-mobility transistor, which may include: a drain contact a nanowire layer arranged on the drain contact and at least one vertical nanowire and a supporting material laterally enclosing the at least one vertical nanowire, a heterostructure arranged on the nanowire layer and comprising an AlGaN-layer and a GaN-layer together forming a heterojunction, at least one source contact in contact...