US Patent Issued to Epicrew on July 14 for "Vapor phase growth system and method of producing epitaxial wafer" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,191, issued on July 14, was assigned to Epicrew Corp. (Ohmura, Japan).

"Vapor phase growth system and method of producing epitaxial wafer" was invented by Akira Okabe (Ohmura, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a vapor phase growth system in which a preheating ring is provided around a susceptor, the flow rate of source gas can be adjusted by changing the position of the susceptor, and the effect on the film thickness variation of a semiconductor single-crystal layer due to the changes of the position of the susceptor is caused to be less likely to occur. The susceptor is raised/lowered by a susceptor position changing mechanism...