ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,413, issued on April 7, was assigned to ENTEGRIS INC. (Billerica, Mass.).

"Silicon nitride etching compositions and method" was invented by Steven M. Bilodeau (Fairfield, Conn.) and Claudia Yevenes (White Plains, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivit...