US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 9 for "Resonant tunneling diodes and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,317, issued on Sept. 9, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Resonant tunneling diodes and manufacturing methods thereof" was invented by Kai Cheng (Jiangsu, China) and Kai Liu (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element...