ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,402, issued on Sept. 2, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).
"GaN-based semiconductor structures" was invented by Kai Cheng (Jiangsu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a GaN-based semiconductor structure, including: a substrate; a channel layer; a barrier layer, where the channel layer and the barrier layer each include a gate region, a source region and a drain region; a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region; a gate electrode located in the gate region; a source elec...