US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 1 for "Semiconductor structure and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,218, issued on Sept. 1, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structure and method for manufacturing the same" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; and a buffer layer and a heterojunction structure layer which are disposed on the substrate sequentially, along a direction perpendicular to a direction from the substrate to the buffer layer, the buffer layer includes a plurality of ion implanted regions disposed at intervals, and the plurality of ion implanted regions include an impurity ion. The impurity ion is implant...