US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 1 for "Multi-wavelength LED structures and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,285, issued on Sept. 1, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Multi-wavelength LED structures and manufacturing methods thereof" was invented by Weihua Liu (Suzhou, China) and Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) and a manufacturing method therefor. The multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) comprises: a first semiconductor layer (11), a stress release layer (12) having a V-shaped pit (12a), a first quantum well layer (131) and a second quantum well layer (132), which are stacked, from bottom to top, on a side wall of t...