US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 4 for "Semiconductor structures and methods of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,862, issued on Nov. 4, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Semiconductor structures and methods of manufacturing the same" was invented by Dandan Zhu (Jiangsu, China), Liyang Zhang (Jiangsu, China) and Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides...