US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 3 for "Enhancement-mode semiconductor structure and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,664, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Enhancement-mode semiconductor structure and method for manufacturing the same" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are an enhancement-mode semiconductor structure and a method for manufacturing the same. The method includes: providing a substrate of a first conductivity type; growing a first semiconductor layer of the first conductivity type and a second semiconductor layer of the first conductivity type on the substrate sequentially; etching a groove on a side, away from the substrate, of the second semico...