ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,372, issued on June 30, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Frontside-illuminated image sensor" was invented by Yuchao Chen (Suzhou, China) and Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a frontside-illuminated image sensor, including a substrate, a photosensitive unit, and a lens structure. The substrate has a plurality of charge storage regions; The photosensitive unit is above the substrate, and the photosensitive unit includes a plurality of photosensitive sub-units. Each photosensitive sub-unit includes a red photosensitive layer, a green photosensitive layer,...